M95640-DRDW3TP/K ST
| Available |
M95640-DRDW3TP/K ST
• Compatible with the Serial Peripheral Interface (SPI) bus
• Memory array
– 64 Kbit (8 Kbyte) of EEPROM
– Page size: 32 byte
– Write protection by block: 1/4, 1/2 or whole memory
– Additional Write lockable Page (Identification page)
• Extended temperature and voltage ranges
– Up to 125 °C (VCC from 1.7 V to 5.5 V)
– Up to 145 °C (VCC from 2.5 V to 5.5 V)
• High speed clock frequency
– 20 MHz for VCC ≥ 4.5 V
– 10 MHz for VCC ≥ 2.5 V
– 5 MHz for VCC ≥ 1.7 V
• Schmitt trigger inputs for noise filtering
• Short Write cycle time
– Byte Write within 4 ms
– Page Write within 4 ms
• Write cycle endurance
– 4 million Write cycles at 25 °C
– 1.2 million Write cycles at 85 °C
– 600 k Write cycles at 125 °C
– 400 k Write cycles at 145 °C
• Data retention
– 50 years at 125 °C
– 100 years at 25 °C
• ESD Protection (Human Body Model)
– 4000 V
• Packages
– RoHS-compliant and halogen-free (ECOPACK2®)
• Compatible with the Serial Peripheral Interface (SPI) bus
• Memory array
– 64 Kbit (8 Kbyte) of EEPROM
– Page size: 32 byte
– Write protection by block: 1/4, 1/2 or whole memory
– Additional Write lockable Page (Identification page)
• Extended temperature and voltage ranges
– Up to 125 °C (VCC from 1.7 V to 5.5 V)
– Up to 145 °C (VCC from 2.5 V to 5.5 V)
• High speed clock frequency
– 20 MHz for VCC ≥ 4.5 V
– 10 MHz for VCC ≥ 2.5 V
– 5 MHz for VCC ≥ 1.7 V
• Schmitt trigger inputs for noise filtering
• Short Write cycle time
– Byte Write within 4 ms
– Page Write within 4 ms
• Write cycle endurance
– 4 million Write cycles at 25 °C
– 1.2 million Write cycles at 85 °C
– 600 k Write cycles at 125 °C
– 400 k Write cycles at 145 °C
• Data retention
– 50 years at 125 °C
– 100 years at 25 °C
• ESD Protection (Human Body Model)
– 4000 V
• Packages
– RoHS-compliant and halogen-free (ECOPACK2®)
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