BAS516,115 NXP
Available
BAS516,115 NXP
• High switching speed: trr ≤ 4 ns
• Low capacitance
• Low leakage current
• Reverse voltage: VR ≤ 100 V
• Small SMD plastic package
• Repetitive peak reverse voltage: VRRM ≤ 100 V
• High switching speed: trr ≤ 4 ns
• Low capacitance
• Low leakage current
• Reverse voltage: VR ≤ 100 V
• Small SMD plastic package
• Repetitive peak reverse voltage: VRRM ≤ 100 V
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