Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A
Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A
Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.5 A
Low profile - 0.8 mm maximum - in the new package MicroFET 2X2 mm
Free from halogenated compounds and antimony oxides
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