- Max rDS(on)= 3.9 mo at Ves = 10 V, ID= 19 A
- Max 「Ds(on)= 5.5 m at Ves = 8 V, ID=15.5A
- Advanced Package and Silicon combination for low rDs(on)and high efficiency
- Nextgenerationenhancedbodydiodetechnology,engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
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