PIC16F636-I/STVAO microchip
Available
PIC16F636-I/STVAO microchip
• Precision Internal Oscillator: - Factory calibrated to ±1%, typical - Software selectable frequency range of 8 MHz to 125 kHz - Software tunable - Two-Speed Start-up mode - Crystal fail detect for critical applications - Clock mode switching during operation for power savings • Clock mode switching for low-power operation • Power-Saving Sleep mode • Wide operating voltage range (2.0V-5.5V) • Industrial and Extended Temperature range • Power-on Reset (POR) • Wake-up Reset (WUR) • Independent weak pull-up/pull-down resistors • Programmable Low-Voltage Detect (PLVD) • Power-up Timer (PWRT) and Oscillator Start-up Timer (OST) • Brown-out Reset (BOR) with software control option • Enhanced Low-Current Watchdog Timer (WDT) with on-chip oscillator (software selectable nominal 268 seconds with full prescaler) with software enable • Multiplexed Master Clear with pull-up/input pin • Programmable code protection (program and data independent) • High-Endurance Flash/EEPROM cell: - 100,000 write Flash endurance - 1,000,000 write EEPROM endurance - Flash/Data EEPROM Retention: > 40 years
• Precision Internal Oscillator: - Factory calibrated to ±1%, typical - Software selectable frequency range of 8 MHz to 125 kHz - Software tunable - Two-Speed Start-up mode - Crystal fail detect for critical applications - Clock mode switching during operation for power savings • Clock mode switching for low-power operation • Power-Saving Sleep mode • Wide operating voltage range (2.0V-5.5V) • Industrial and Extended Temperature range • Power-on Reset (POR) • Wake-up Reset (WUR) • Independent weak pull-up/pull-down resistors • Programmable Low-Voltage Detect (PLVD) • Power-up Timer (PWRT) and Oscillator Start-up Timer (OST) • Brown-out Reset (BOR) with software control option • Enhanced Low-Current Watchdog Timer (WDT) with on-chip oscillator (software selectable nominal 268 seconds with full prescaler) with software enable • Multiplexed Master Clear with pull-up/input pin • Programmable code protection (program and data independent) • High-Endurance Flash/EEPROM cell: - 100,000 write Flash endurance - 1,000,000 write EEPROM endurance - Flash/Data EEPROM Retention: > 40 years
Please make sure your contact information is correct. Your message will be sent directly to the recipient(s) and will not be publicly displayed. We will never distribute or sell your personal information to third parties without your express permission.
